Highly (222)-oriented pyrochlore PZN-PT thin films prepared by pulsed laser deposition
作者： H. L. Han , A. Y. Liu , L. L. Wei , P. Wang , F. T. Lin
DOI: 10.1117/12.2053925
关键词:
摘要: ABSTRACT Highly (222)-oriented 90%Pb(Zn 1/3 Nb 2/3 )O 3 -10%PbTiO (abbreviated PZNPT) thin films, about 550nm in thickness, have been successfully grown on (111)Pt/Ti/SiO 2 /Si substrate by pulsed laser deposition method. Pure pyrochlore phase with highly (222)-preferred orientation, determined X-ray diffraction, was formed the PZNPT films when temperature of substrates is 550 &. FE -SEM investigation shows that surface appearance and cross section are smooth crack-free some dispersive spherical protrusions. The dielectric constant loss were measured using an impedance anal yzer (HP4194A). ( H r ) dissipation factor tan G at 1 kHz 205 0.03, respectively. Keywords: PZN-PT deposition, pyrochlore, 1. INTRODUCTION Perovskite (1-x)PZN-xPT single crystals exhibit very high permittivity > 3000), excellent coupling coefficients (k
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