Fabrication of Ge nanocrystals doped silica-on-silicon waveguides and observation of their strong quantum confinement effect
作者： Haiyan Ou , Karsten Rottwitt
DOI: 10.1109/LEOS.2008.4688517
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摘要: Standard silica-on-silicon waveguides with a core doped by Ge nanocrystals were fabricated using PECVD and RIE. Transmission of the waveguide was measured, strong absorption peaks at 1056.8 nm, 1406 nm 1263.2 observed.
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