作者: J.P. Colinge , J.P. Eggermont , D. Flandre , P. Francis , P.G.A. Jespers
DOI: 10.1109/ISSCC.1995.535519
关键词:
摘要: SOI technology offers significant assets for low-voltage, low-power high-speed logic. The steeper subthreshold slope of MOSFETs not only improves design low-voltage logic circuits, but also opportunities analog design. Identical DC gains can be achieved in and bulk either with less current or smaller geometries, both. This is illustrated by plots total area stand-by versus open-loop gain two identical Miller op amps, one SOI.