UHF RF front-end circuits in 0.35-µm silicon on insulator (SOI) CMOS
作者： Ertan Zencir , Te-Hsin Huang , Ahmet Tekin , Numan S. Dogan , Ercument Arvas
DOI: 10.1007/S10470-005-4953-Z
关键词:
摘要: In this work, design and measurement results of UHF RF frontend circuits to be used in low-IF subsampling receiver architectures are presented. We report on three low noise amplifiers (LNA) (i) single-ended (ii) differential (iii) high-gain a double-balanced mixer all implemented 0.35-μm SOI (Silicon Insulator) CMOS technology Honeywell. These considered as candidate low-power building blocks the two fully-integrated chips targeted for deep space communications. Characteristics square spiral inductors with high quality (Q) factors (as 10.8) reported. Single-ended fully-differential LNA's provide gains 17.5 dB 18.74 at 435 MHz, respectively. Noise figure LNA is 2.91 while 3.25 dB. were obtained power dissipations 12.5 mW 16.5 from 2.5-V supply LNA's, High-gain provides small-signal gain 45.6 2.4 MHz. Total dissipation 28 3.3-V supply. The conversion 5.5 13 2 MHz IF. 11.5 measured responses meet requirements communications system. die areas occupied by LNA, 0.6mm × 1.4mm, 1mm 1.4mm 1.2mm 0.9mm,
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