A photoelectrochemical methodology to obtain nanorods of crystalline hexagonal trigonal selenium

摘要: Abstract The conditions for trigonal selenium film deposition on gold substrate (f-Se) was investigated using cyclic voltammetry, chronoamperometry, optical microscopy, scanning electron microscopy and X-ray diffraction, which showed the production of a highly crystalline homogeneous formed hexagonal microrods structures with diameters between 300 600 nm. However, such characteristics only by into 0.1 mol L−1 HNO3 at 80 °C containing 0.02 mol L−1 SeO2 potential −0,45 V vs SCE, under illumination halogen lamp 100 W, irradiance 200 mW cm−2, magnetic stirring time 600 s or higher. It believed that mechanism t‑selenium growth is associated (photo)electrocorrosion process, where combination incident light applied cause dissolution amorphous favoring faces making them more conductive absorption. characterization films determined band gap 1.74 ± 0.03 eV, photoelectrochemical activity, flat 0.63 ± 0.17 V SCE charge carriers density 4.97 ± 0.90 × 1015 cm−3.