Novel attributes in modeling and optimizing of the new graphene based InxGa1−xN Schottky barrier solar cells

摘要: Based on the ability of InxGa1−xN materials to optimally span solar spectrum and their superior radiation resistance, cells based p-type with low indium contents interfacing graphene film (G/InxGa1−xN), is proposed exploit benefit transparency work function tunability graphene. Then, power conversion efficiency modeled optimized using a new analytical approach taking into account all recombination processes accurate carrier mobility. Furthermore, performance was compared silicon counterparts G/p-InxGa1−xN showed relatively smaller short-circuits current (∼7 mA/cm2) significantly higher open-circuit voltage (∼4 V) (∼30%). The thickness, doping concentration, p-InxGa1−xN were found substantially affect G/p-InxGa1−xN.