作者: Zahra Arefinia , Asghar Asgari
DOI: 10.1109/IRANIANCEE.2015.7146442
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摘要: In this paper, a new structure of Gr/Si solar cells by introducing layer silicon quantum dots (SiQDs) between graphene and is proposed to engineer the interface for improving device performance. The simulation results have shown that introduction SiQDs can effectively increase open-circuit voltage cells. As result, maximum efficiency 16.72% be achieved Gr-SiQDs-Schottky barrier cell.