Study of thermally oxidized yttrium films on silicon

摘要: Electrical and structural characteristics of thin thermally oxidized yttrium layers on Si covered with 40 A SiO2 have been investigated. The factor ∼ four advantage in the dielectric constant Y2O3 over SiO2, coupled extremely low leakage current density better than 10−10 A/cm2 a field 1.9 MV/cm, sufficiently high breakdown strength, well‐behaved capacitance‐voltage makes viable candidate for very large scale integration applications, at least passive devices. High‐resolution transmission electron microscopy reveals structure composite provides good agreement between calculated experimental capacitance.