A theoretical and experimental approach to the active-to-passive transition in the oxidation of silicon carbide : Experiments at high temperatures and low total pressures
作者： B SCHNEIDER , A GUETTE , R NASLAIN , M CATALDI , A COSTECALDE
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摘要: … oxidation is ascribed to the formation—deposition of a silica film (SiO ) on the SiC specimen surface, whereas in active oxidation … the oxidation phenomena of silicon carbide under low …
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