Patterning process and composition for forming silicon-containing film usable therefor
作者： Tsutomu Ogihara , Takafumi Ueda , Toshiharu Yano
DOI:
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摘要: The invention provides a patterning process for forming negative pattern by lithography, comprising at least the steps of: using composition silicon-containing film, containing specific compound (A) and an organic solvent (B), to form film; silicon-free resist photoresist film on heat-treating subsequently exposing high energy beam; developer dissolve unexposed area of thereby obtaining pattern. There can be process, which is optimum as formed adopting solvent-based development, used in process.
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