作者: Allan Rosencwaig , Walter Lee Smith , John Opsal
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摘要: A method and apparatus is disclosed for detecting defect surface states in any material particular semiconductors. In the subject device, a periodic localized excitation generated at of sample with an intensity modulated pump laser beam. probe beam directed to changes which are phase frequency detected. preferred embodiment, optical reflectivity induced by detected measuring corresponding modulations reflected power Any time dependence reflectance signal monitored. An evaluation then made investigating magnitude and/or this signal.