Transport Coefficient of Gallium-doped Bi2Te3 Single Crystals
作者： J. Navrátil , P. Lošťák , J. Horák
关键词:
摘要: Gallium-doped Bi2Te3 single crystals were prepared by means of a modified Bridgman method. Temperature dependences the Hall constant RH(B ∥ c), electrical conductivity σ⊥c and Seebeck coefficient S(Δ T ⊥ c) measured on samples these in temperature interval 100–400 K. The variations investigated transport coefficients with increasing Ga content showed that atoms crystal lattice behave as donors. This effect is qualitatively explained basis model point defects Bi2Te3(Ga) crystals; singly ionised gallium interstitial sites; Gai, are considered to be most probable defects.
sci-hub.se 参考文章(3)
Jitka Šrámková, Stanislav Kotrlý, Extractive photometric determination of gallium with 8-quinolinol in layered crystals of bismuth telluride-estimation of the determination limit. Talanta. ,vol. 35, pp. 841- 845 ,(1988) , 10.1016/0039-9140(88)80200-5
P. Lošťák, R. Novotoný, J. Navrátil, J. Šrámková, Optical properties of gallium‐doped Bi2Te3 single crystals Physica Status Solidi (a). ,vol. 106, pp. 619- 625 ,(1988) , 10.1002/PSSA.2211060234
G.R. Miller, Che-Yu Li, Evidence for the existence of antistructure defects in bismuth telluride by density measurements Journal of Physics and Chemistry of Solids. ,vol. 26, pp. 173- 177 ,(1964) , 10.1016/0022-3697(65)90084-3