Vanadium supersaturated silicon system: a theoretical and experimental approach

摘要: The effect of high dose vanadium ion implantation and pulsed laser annealing on the crystal structure sub-bandgap optical absorption features V-supersaturated silicon samples has been studied through combination experimental theoretical approaches. Interest in Si focusses its potential as a material having new band within bandgap. Rutherford backscattering spectrometry measurements formation energies computed quantum calculations provide evidence that V atoms are mainly located at interstitial positions. response spectral photoconductance is extended far into infrared region spectrum. Theoretical simulations (based density functional theory many-body perturbation GW approximation) bring to light that, addition positions, defects should also be taken account explaining profile photoconductance. methods provides improved up 6.2 µm (0.2 eV) due transitions, for which bandgap plays an essential role. This enables use third generation photovoltaic devices.