作者: Vali Dalouji , Smohammad Elahi , Shahram Solaymani , Atefeh Ghaderi , Hossein Elahi
DOI: 10.1007/S00339-016-0074-Z
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摘要: In this work, the electrical properties of carbon–nickel films annealed at different temperatures (573, 773, 1073 and 1273 K) in temperature range 15–300 K were investigated. The grown by radio frequency magnetron co-sputtering on quartz substrates room temperature. multiphonon hopping conduction mechanism is found to dominate transport 150–300 K. It can be seen that room-temperature rate (ΓRT) 773 K has maximum value 56.8 × 105 s−1. Our results conductivity measurements high are good agreement with strong carrier–lattice coupling model; other hand, 15–50 K well described terms variable-range (VRH) mechanism. localized state density around Fermi level N(E F) average energy W hop low for have 2.23 × 1023 (cm−3 eV−1) minimum 9.74 × 10−4 eV, respectively.