作者: De-Sheng Jiang , Zhao-Ping Wang , C. Abraham , K. Syassen , Y.H. Zhang
DOI: 10.1016/0022-3697(94)00214-2
关键词:
摘要: Abstract The LO phonon modes in the barrier layers of a GaInAs/AlInAs multiple quantum well structure are investigated by resonance Raman scattering (RRS), excitation laser photon energy tuned to resonate with above interband transition energy. enhancement peaks shown be caused Frohlich electron-phonon interaction. pressure-dependent profiles for both AlAs-like (LO 2 , mode) and InAs-like 1 peak intensities fitted Gaussian lineshape. shift between these two can explained outgoing RRS mechanism, providing information on pressure-induced excitonic amplitude ratios close 1, showing defined two-mode behavior nearly equal polarizability AlAs InAs bonds AlInAs alloy.