A study of resonant Raman scattering in GaInAs/AlInAs multiple quantum wells
作者： DS Jiang , Yong-Hang Zhang , C Abraham , K Syassen , JB Xia
DOI: 10.1016/0749-6036(92)90351-5
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摘要: Abstract Resonant Raman scattering is investigated on GaInAs/AlInAs multiple quantum well (MQW) heterostructures, lattice-matched to InP substrates. The resonance realized at several fixed laser lines by varying the hydrostatic pressure tune interband transition energies (in neighborhood of AlInAs band gap) into resonance. Our tight-binding calculation electronic envelope functions shows that related optical transitions between electron and hole extended states. strong resonant enhancement peaks occurs only for LO phonons which are confined in barrier layers, but not GaInAs phonons, providing direct experimental evidence spatial distribution excitons.
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