Performance and reliability comparison of power DMOSFET structures with and without an integral Schottky diode
作者： N. Krasnoperov , K. Shenai
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摘要: This paper reports on the results obtained from a study of performance and reliability characteristics two low-voltage power MOSFET structures. Both structures were fabricated using ultrahigh cell density self-aligned refractory TiSi/sub 2/ gate contact technology. In structure with an integral Schottky diode (ISMOSFET), approximately 5% total number cells used for incorporating in parallel parasitic PN-junction inherent structure. Two-dimensional (2D) mixed device circuit simulations to unclamped inductive switching (UIS) characteristics. It is shown that ISMOSFET performs similarly under UIS conditions. The former, however, more than 30% improvement reverse recovery no degradation on-state loss off-state blocking voltage rating. simulation are be excellent agreement measured data. >
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