Studying a Silica Film Implanted with Zn and Irradiated with Swift Xe Ions
作者： V. V. Privezentsev , A. N. Palagushkin , V. A. Skuratov , V. S. Kulikauskas , V. V. Zatekin
DOI: 10.3103/S1062873819110194
关键词:
摘要: The effect irradiation with swift heavy Xe ions at an energy of 167 MeV has on the structure and properties a Zn-implanted SiO2 film is studied. implantation Zn found to result in formation amorphous zinc nanoparticles around 10 nm size depth near projective range (Rp ≈ 40 nm) film. dampens exciton recombination–induced peak photoluminescence spectrum wavelength 370 nm. It also raises 430 nm, which associated radiation defects. Bombarding surface Хе results craters surrounded by hillocks, emergence Zn-containing nanoparticles.
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