ZnO nanoparticle formation in Zn+ ion implanted SiO2/Si structure

摘要: The investigation of ZnO NPs formation in SiO2/Si structure by Zn+ ion implantation with furnace annealing is presented. After the samples were subsequently isochronally subjected to during 1 h nitrogen at 400 °C, and then oxygen 600 800 °C. radiation defects Zn implant profiles investigated Rutherford backscattering spectroscopy. Optical absorption spectra from reflection experiment data test studied room temperature a spectral range 250-600 nm. Photoluminescence was spent using He-Cd laser wavelength 325 nm 240-800 SiO2 film created metal NPs. °C there occurred increasing NP size. During 600-800 transformation its oxide form ZnO. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)