Nanoparticle Formation in Zn+ and O+ Ion Sequentially Implanted SiO2 Film
作者： V. V. Privezentsev , A. V. Makunin , A. A. Batrakov , S. V. Ksenich , A. V. Goryachev
DOI: 10.1134/S106378261805024X
关键词:
摘要: The 64Zn+ and 16O+ ions were implanted in SiO2 film on Si substrate with next parameters: the implant dose was 5.0 × 1016 cm–2, for Zn+ energy 50 keV O+ 16 keV. Than samples subjected to isochronally during 1h annealing N2 atmosphere temperature range 400–600°C than Ar from 700 up 1000°C a step of 100°C. After surface is structured its roughness increases due nanoparticle formation subsurface layer. In as annealed body Zn-contained nanoparticles size about 100 nm formed. These consist presumably Zn phase after implantation ZnO annealing.
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