Probing the switching mechanism in ZnO nanoparticle memristors
作者： Cheng Li , Gareth J. Beirne , Gen Kamita , Girish Lakhwani , Jianpu Wang
DOI: 10.1063/1.4894823
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摘要: We investigate the resistance switching mechanism in memristors based on colloidal ZnO nanoparticles using electroabsorption (EA) spectroscopy. In this EA experiment, we incorporate a small amount of low-bandgap polymer, poly(9,9-dioctylfluorene-co-benzothiadiazole), as probe molecule ZnO-nanoparticle memristors. By characterizing can study change built-in potential (VBI) device during process without disturbing state by light. Our results show that VBI increases when is switched to high state, suggesting shift effective workfunction electrode. Thus, attribute field-dependent migration oxygen vacancies associated with adsorption and desorption molecules at Al/ZnO interface. This modulation interfacial injection barrier, which governs device.
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