Surface Modification of Zinc Oxide Nanoparticles Influences the Electronic Memory Effects in ZnO−Polystyrene Diodes
作者： Frank Verbakel , Stefan C. J. Meskers , René A. J. Janssen
DOI: 10.1021/JP072999J
关键词:
摘要: Resistive switching effects in diode structures with a spin-coated active layer containing zinc oxide (ZnO) nanoparticles polystyrene matrix are studied. The effect can be influenced by modification of the surface coordinating ligands (amines and thiols). Using n-propylamine as ligand, memory observed without diodes having undergone forming step that is usually required before bulk metal oxides. Memory characterized impedance spectroscopy temperature-dependent current-voltage measurements involve spontaneous, thermally activated gradual transition from state high frequency independent conduction to lower conductivity.
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