Investigation of silicon doped by zinc ions with a large dose

摘要: The formation of nanoparticles in СZn-Si(100) implanted with 64Zn+ ions using a dose 5 × 1016 cm–2 and an energy 50 keV at room temperature subsequent thermal processing oxygen temperatures ranging from 400 to 900°C is studied. surface topology investigated scanning electron (in the secondary emission mode) atomic force microscopes. structure composition near-surface silicon layer are examined high-resolution transmission electronic microscope fitted device for dispersive microanalysis. An amorphized Si up 130 nm thick forms when zinc implanted. Amorphous average size 4 observed this layer. A damaged also due radiation defects. metallic phase found sample after low-temperature annealing range 400–600°C. When raised 700°C, oxide ZnO can form complex · Zn2SiO4 presumably emerges 800°C or higher, zinc-containing lateral sizes 20–50 on sample’s surface.