Ion-Track Modification of a Silicon-Dioxide Film Implanted with Zinc Ions and Annealed in Oxygen

摘要: The formation of a zinc-oxide phase in SiO2 film deposited onto n-type Si substrates grown the (100) orientation using Czochralski technique, which is result implanting 64Zn+ ions at room temperature, an energy 50 keV, and dose 5 × 1016 cm–2, subsequent heat treatment oxygen atmosphere elevated temperatures, studied. surface topology investigated methods scanning electron atomic force microscopy. optical properties are studied method photoluminescence spectroscopy 10 K by measuring light reflection spectra. After Zn implantation, ZnO detected subsurface layer film. low-temperature annealing range 400–600°С, Zn-containing precipitates with cross-sectional size particles 20–50 nm found sample on its surface. 700–800°C, Zn·ZnO complex formed layer, · Zn2SiO4 after temperatures 900–1000°C. samples obtained temperature optimal for (about 700°C) irradiated 132Xe26+ 167 MeV. to disappear irradiation fluence 2 1013 cm–2 large number radiation-induced defects giving characteristic band formed. With increase Xe 1014 intensity this luminescence increases.