STRUCTURE AND PROPERTIES OF ZN-IMPLANTED SI NEAR-SURFACE LAYER MODIFICATION DEPENDING ON IRRADIATION FLUENCE OF 132 XE 26+ IONS WITH ENERGY OF 167 MEV
作者： V. V. Privezentsev , V. S. Kulikauskas , V. A. Skuratov , O. S. Zilova , A. A. Burmistrov
DOI: 10.1134/S1063782619030163
关键词:
摘要: Single-crystal n-Si(100) wafers are implanted with 64Zn+ ions an energy of 50 keV and dose 5 × 1016 cm–2. Then the samples irradiated 132Xe26+ 167 MeV in range fluences from 1 1012 to 1014 The surface cross section visualized by scanning electron microscopy transmission microscopy. distribution Zn atoms is studied time-of-flight secondary-ion mass spectrometry. After irradiation Xe, pores clusters consisting a Zn–ZnO mixture observed at sample surface. In amorphized subsurface Si layer, zinc zinc-oxide phases detected. Xe fluence cm–2, no or detected methods used study.
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