Mechanism and crucial parameters on GaN nanocluster formation in a silica matrix

摘要: The formation of wurtzite GaN nanoclusters in an amorphous silica matrix, via gallium and nitrogen ion implantation rapid thermal annealing, is identified using Extended X Ray Absorption Fine Structure analysis. mechanism the crucial parameters that rule are established by use molecular dynamics simulations. dominant structural found to be concentration silicon oxygen vacancies formed during annealing temperature. It concluded at 1400 K 8% Ga/Si 12% N/O ratios needed for nanoclusters. In addition that, nanocluster accomplished only when vacancy concentrations atoms equal 10% 20%, respectively. Finally, observation various snapshots upon increase duration indicates coalescence smaller nuclei towards larger ones, designating Ostwald...