Pattern formation method
作者： Takashi Matsuda
DOI:
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摘要: A first resist film is irradiated with exposure light and performing development, thereby forming a pattern in region including an interconnect trench dummy second connected to the having density lower than that of pattern. Then, hardened, formed on hardened film. After that, region. When pattern, opening made region, whereas filled
lens.org 参考文章(7)
Cha-Won Koh, Gi-sung Yeo, Joon-soo Park, Jeong-lim Nam, Han-ku Cho, Ji-Young Lee, Method of forming a hard mask and method of forming a fine pattern of semiconductor device using the same ,(2007)
Chen-Chiu Hsue, Gary Hong, Process for creating high density integrated circuits utilizing double coating photoresist mask ,(1996)
A. Vanleenhove, D. Van Steenwinckel, A litho-only approach to double patterning Optical Microlithography XX. ,vol. 6520, ,(2007) , 10.1117/12.713914
David Kewley, Process for improving critical dimension uniformity of integrated circuit arrays ,(2006)
Kuo-Chi Tu, Chung-Yi Chen, Chun-Yao Chen, Jian-Yu Shen, Kuo-Chyuan Tzeng, Hsiang-Fan Lee, One-transistor random access memory technology compatible with metal gate process ,(2007)
M. Maenhoudt, Double Patterning scheme for sub-0.25 k1 single damascene structures at NA=0.75, λ=193nm Proc. SPIE. ,vol. 5754, pp. 1508- 1518 ,(2005)
Hiyori Yoichi, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE ,(2003)