注册
/
登录
高级搜索
开启搜索历史记录
删除搜索历史记录.
搜索历史记录选项已关闭,请开启搜索历史记录选项。
我的图书馆
Your browser does not support JavaScript, or it is disabled. JavaScript must be enabled in order to view listings.
The Role of Temperature in Testing Deep Submicron CMOS ASICs
作者: Ethan Long
DOI:
10.15760/ETD.34
关键词:
摘要:
保存
引用
反馈
分享
想要
索引来源
1
下载资源
2
pdx.edu
本地加速
pdx.edu
PDF
下载加速
sci-hub.st
HTML
下载加速
参考文章
(55)
1.
I.M. Filanovsky, L. Najafizadeh,
Zeroing in on a zero-temperature coefficient point
midwest symposium on circuits and systems.
,vol. 1, ,(2002) ,
10.1109/MWSCAS.2002.1187209
2.
Yannis Tsividis,
Operation and modeling of the MOS transistor
,(1987)
3.
M. Bushnell, Vishwani Agrawal,
Essentials of Electronic Testing for Digital, Memory and Mixed-Signal VLSI Circuits
,(2013)
4.
F.E. Pagaduan, J.K.J. Lee, V. Vedagarbha, K. Lui, M.J. Hart, D. Gitlin, T. Takaso, S. Kamiyama, K. Nakayama,
The effects of plasma-induced damage on transistor degradation and the relationship to field programmable gate array performance
international reliability physics symposium.
pp. 315- 318 ,(2001) ,
10.1109/RELPHY.2001.922921
5.
Tak H. Ning, Yuan Taur,
Fundamentals of Modern VLSI Devices
,(2004)
6.
R. Madge, B.H. Goh, V. Rajagopalan, C. Macchietto, R. Daasch, C. Schuermyer, C. Taylor, D. Turner,
Screening minVDD outliers using feed-forward voltage testing
international test conference.
pp. 673- 682 ,(2002) ,
10.1109/TEST.2002.1041819
7.
A. Yassine, R. Hijab,
Temperature dependence of gate current in ultra thin SiO/sub 2/ in direct-tunneling regime
international integrated reliability workshop.
pp. 56- 61 ,(1997) ,
10.1109/IRWS.1997.660282
8.
A. Suzuki, K. Tabuchi, H. Kimura, T. Hasegawa, S. Kadomura,
A strategy using a copper/low-k BEOL process to prevent negative-bias temperature instability (NBTI) in p-MOSFETs with ultra-thin gate oxide
symposium on vlsi technology.
pp. 216- 217 ,(2002) ,
10.1109/VLSIT.2002.1015458
9.
A. Keshavarzi, K. Roy, C.F. Hawkins,
Intrinsic leakage in low power deep submicron CMOS ICs
international test conference.
pp. 146- 155 ,(1997) ,
10.1109/TEST.1997.639607
10.
N. Kimizuka, K. Yamaguchi, K. Imai, T. Iizuka, C.T. Liu, R.C. Keller, T. Horiuchi,
NBTI enhancement by nitrogen incorporation into ultrathin gate oxide for 0.10-/spl mu/m gate CMOS generation
symposium on vlsi technology.
pp. 92- 93 ,(2000) ,
10.1109/VLSIT.2000.852782
来源期刊
2003 年,
Volume: , Issue: ,
Page:
相似文章
0
我的图书馆
我的账户
注册
登录
Copyright 2023 ©KipHub.
高级搜索
查找文章
包含所有这些词
包含完全匹配的短语
包含至少一个这些词
不包含这些词
词语出现的位置
任意位置
标题中
显示以下作者所著的文章:
例如:
丁肇中
或
"PJ Hayes"
显示以下刊物上的文章:
例如:
《学术探索》
或
《Nature》
显示在此期间发表的文章:
—
例如:
1996
百变星君
加载中...