Correlation between resistance fluctuations and temperature dependence of conductivity in graphene

摘要: It is known that monolayer graphene has an extraordinarily high intrinsic mobility of the charge carriers. An important complication presence strong mesoscopic resistance fluctuations (MRFs) that, in graphene, persist to relatively temperatures. These reproducible are seen as a function gate voltage but they not expected be temperature $T$. However, we propose monotonic increases or decreases $R(T)$ observe flakes $T$ from 4.2 K around 70 arise decay magnitude MRFs due progressive dephasing interfering scattered electron waves. Using field effect transistor configuration, demonstrate this explanation correct by measurements at different constant voltages ${V}_{\text{G}}$ tuned features observed $R({V}_{\text{G}})$ temperature. We find dependence MRF is, surprisingly, best fitted exponential decay.