Dip-coating of ITO films
作者： Yasutaka Takahashi , Shinya Okada , Radhouane Bel Hadj Tahar , Ken Nakano , Takayuki Ban
DOI: 10.1016/S0022-3093(97)00199-3
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摘要: Abstract Uniform, transparent indium tin oxide (ITO) films were prepared by dip-coating process using an organic sol composed of acetate—diethanolamine—tin octylate-n-propanol mixture and the relationship between their electrical properties, film morphology conditions have been investigated. The optimum Sn-doping concentration was about 4 mol% relative to In ion. conductivity as-prepared ITO increased with increase in firing temperature. Multiple coating layers as thin a few tens nanometers accelerated growth crystals formed films. Thus, resistivity × 10−4 Ω cm could be obtained subsequent post annealing nitrogen. Through this study we conclude that dip-coated mainly controlled crystallite size and, hence, carrier mobility.
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