作者: Hiroyuki Hayashi , Rong Huang , Fumiyasu Oba , Tsukasa Hirayama , Isao Tanaka
DOI: 10.1557/JMR.2010.32
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摘要: Mn-doped γ-Ga2O3 thin films with a defective spinel structure have been epitaxially grown on (100) substrates using pulsed laser deposition. The crystal quality of the is strongly dependent preparation conditions, particularly substrate temperature and energy density, as well Mn concentration. In 7 cation% film under optimized full width at half maximum in x-ray diffraction rocking curve for (400) plane 117 arcsec root-mean-square roughness surface approximately 0.4 nm. These values are comparable to those substrate. shows uniform tetragonal distortion tetragonality 1.05.