Room temperature ferromagnetism in (Ga1−xMnx)2O3 epitaxial thin films
作者： Daoyou Guo , Zhenping Wu , Yuehua An , Xiaojiang Li , Xuncai Guo
DOI: 10.1039/C4TC02833C
关键词: Epitaxy 、 Coercivity 、 Condensed matter physics 、 Monoclinic crystal system 、 Molecular beam epitaxy 、 Thin film 、 Ferromagnetism 、 Magnetization 、 Band gap 、 Materials science
摘要: Mn-doped monoclinic β-(Ga1−xMnx)2O3 thin films were epitaxially grown on α-Al2O3 (0001) substrates by alternately depositing Ga2O3 and Mn layers using the laser molecular beam epitaxy technique. The crystal lattice expands energy band gap shrinks with increase of content for ions incorporated into Ga site. Ferromagnetism appears even above room temperature when x ≥ 0.11 can be remarkably enhanced continuous indicated increased magnetization coercivity. This study presents a promising candidate use in spintronic devices that are capable working at temperature.
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