Role of O-2 radicals on silicone plasma treatments for a-Si:H surface passivation of PV wafers bonded to glass
作者： Stefano Nicola Granata , Alessio Marchegiani , Twan Bearda , Loic Tous , David Cheyns
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摘要: Argon (Ar) and oxygen (O2) plasmas are performed on silicone adhesives to eliminate the negative influence of amorphous silicon (a-Si:H) surface passivation wafers bonded glass. Both Ar O2 lead oxidation surface, consisting in an increase oxygen/carbon ratio, degree crosslinking, material density. The oxidized is more resilient than pristine does not interact with a-Si:H process, allowing for state-of-the-art Similarities between modifications induced by indicate secondary role radicals process. Moreover, amorphous/crystalline heterojunction interdigitated back contact solar cells (a-Si:H/c-Si HJ i-BC) fabricated freestanding treated plasma. devices show comparable open-circuit voltages up 675 mV, confirming at device level efficacy treatment.
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