Limiting efficiency of crystalline silicon solar cells due to Coulomb‐enhanced Auger recombination
作者： Mark J. Kerr , Andres Cuevas , Patrick Campbell
DOI: 10.1002/PIP.464
关键词: Dopant 、 Auger effect 、 Chemistry 、 Fermi level 、 Electrical resistivity and conductivity 、 Silicon 、 Exciton 、 Crystalline silicon 、 Recombination 、 Atomic physics
摘要: … It is therefore necessary to modify the fourth term in Equation (4) with the photon recycling rate PRR, which is the fraction of photons emitted by radiative recombination which are …
sci-hub.se 参考文章(16)
Martin A. Green, Limiting efficiency of bulk and thin-film silicon solar cells in the presence of surface recombination Progress in Photovoltaics. ,vol. 7, pp. 327- 330 ,(1999) , 10.1002/(SICI)1099-159X(199907/08)7:4<327::AID-PIP250>3.0.CO;2-B
H. Schlangenotto, H. Maeder, W. Gerlach, Temperature dependence of the radiative recombination coefficient in silicon Physica Status Solidi (a). ,vol. 21, pp. 357- 367 ,(1974) , 10.1002/PSSA.2210210140
R.A. Sinton, R.M. Swanson, Recombination in highly injected silicon IEEE Transactions on Electron Devices. ,vol. 34, pp. 1380- 1389 ,(1987) , 10.1109/T-ED.1987.23095
M.A. Green, Limits on the open-circuit voltage and efficiency of silicon solar cells imposed by intrinsic Auger processes IEEE Transactions on Electron Devices. ,vol. 31, pp. 671- 678 ,(1984) , 10.1109/T-ED.1984.21588
A. Hangleiter, R. Häcker, Enhancement of band-to-band Auger recombination by electron-hole correlations. Physical Review Letters. ,vol. 65, pp. 215- 218 ,(1990) , 10.1103/PHYSREVLETT.65.215
Jianhua Zhao, Aihua Wang, Martin A. Green, 24·5% Efficiency silicon PERT cells on MCZ substrates and 24·7% efficiency PERL cells on FZ substrates Progress in Photovoltaics. ,vol. 7, pp. 471- 474 ,(1999) , 10.1002/(SICI)1099-159X(199911/12)7:6<471::AID-PIP298>3.0.CO;2-7
G. G. Macfarlane, T. P. McLean, J. E. Quarrington, V. Roberts, FINE STRUCTURE IN THE ABSORPTION-EDGE SPECTRUM OF SI Physical Review. ,vol. 111, pp. 1245- 1254 ,(1957) , 10.1103/PHYSREV.111.1245
Pietro P. Altermatt, Jan Schmidt, Gernot Heiser, Armin G. Aberle, Assessment and parameterisation of Coulomb-enhanced Auger recombination coefficients in lowly injected crystalline silicon Journal of Applied Physics. ,vol. 82, pp. 4938- 4944 ,(1997) , 10.1063/1.366360
Rolf Häcker, Andreas Hangleiter, Intrinsic upper limits of the carrier lifetime in silicon Journal of Applied Physics. ,vol. 75, pp. 7570- 7572 ,(1994) , 10.1063/1.356634
J. Dziewior, W. Schmid, Auger coefficients for highly doped and highly excited silicon Applied Physics Letters. ,vol. 31, pp. 346- 348 ,(1977) , 10.1063/1.89694