CHARACTERIZATION AND MODELING OF BACK-CONTACT BACK-JUNCTION SILICON SOLAR CELLS
作者： S. Kluska , F. Granek , M. Rüdiger , S.W. Glunz , M. Hermle
DOI: 10.4229/24THEUPVSEC2009-2AO.2.5
关键词: Base (geometry) 、 Characterization (materials science) 、 Electrical resistivity and conductivity 、 Silicon 、 Short circuit 、 Electrical engineering 、 Materials science 、 Equivalent series resistance 、 Cell geometry 、 Shading 、 Optoelectronics
摘要: The presented paper develops a model to simulate the J-V characteristic of an industrially structurized back-contact back-junction silicon solar cell determine influences main loss mechanisms on parameters. In particular, contains analysis detrimental effect electrical shading losses short circuit current density. theoretical calculations show good agreement with measurement results cells fabricated at Fraunhofer ISE. Furthermore developed was used perform optimizations geometry. modeling that optimum base resistivity, width and pitch is balance between series resistance losses.
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