作者: Martin Hermle , Filip Granek , Oliver Schultz-Wittmann , Stefan W. Glunz
DOI: 10.1109/PVSC.2008.4922761
关键词:
摘要: One of the most often mentioned advantages back-junction back-contacted silicon solar cells is that this cell structure has no shading losses, because metallization fingers and busbars are both located on rear side cell. However, only true if optical losses regarded. In work electrical due to recombination in region base busbar analyzed using two-dimensional numerical device network simulations. The doping dependence these effects investigated as well influence passivation. results simulations compared with EQE maps cells. quantified overall performance discussed.