Extraction of the surface recombination velocity of passivated phosphorus-doped silicon emitters
作者： A. Cuevas , G. Giroult-Matlakowski , P.A. Basore , C. DuBois , R.R. King
DOI: 10.1109/WCPEC.1994.520221
关键词: Recombination 、 Doping 、 Semiconductor device 、 Analytical chemistry 、 Passivation 、 Common emitter 、 Silicon 、 Optoelectronics 、 Solid-state physics 、 Extraction (chemistry) 、 Materials science
摘要: An analytical procedure to extract the surface recombination velocity of SiO/sub 2//n-type silicon interface, S/sub p/, from PCD measurements emitter currents is described. The analysis shows that extracted values p/ are significantly affected by assumed material parameters for highly doped silicon, /spl tau//sub mu//sub and Delta/E/sub g//sup app/. Updated these used obtain dependence on phosphorus concentration, N/sub D/, using both previous new experimental data. evidence supports finding increases strongly with D/.
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