Measuring and modeling minority carrier transport in heavily doped silicon

摘要: Abstract From a fundamental transport formulation it is demonstrated that in heavily doped regions, only two independent parameters control the and recombination of minority carriers. The extraction carrier lifetime, diffusion coefficient, or bandgap narrowing therefore impossible from DC measurements only. At least one additional AC measurement necessary. reported experimental data literature are critically revisited. When published interpreted terms original comprehensive picture appears, with surprising agreement among authors. Modeling regions devices shown to be possible, good predictions emitter saturation current demonstrated.