Origin of high mobility within an amorphous polymeric semiconductor : Space-charge-limited current and trap distribution
作者： Dae Sung Chung , Dong Hoon Lee , Chanwoo Yang , Kipyo Hong , Chan Eon Park
DOI: 10.1063/1.2958213
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摘要: To elucidate the origin of high field-effect mobility (≈0.02cm2∕Vs) amorphous poly[(1,2-bis-(2′-thienyl)vinyl-5′,5″-diyl)-alt-(9,9-dioctyldecylfluorene-2,7-diyl], we investigated current density–voltage (J-V) and mobility–voltage (μ-V) relationships as a function temperature. By using power law model Gaussian hopping model, determined characteristic trap energy 67meV, an energetic disorder parameter 64meV, total density 2.5×1016cm−3, comparable to that poly(3-hexylthiophene). We conclude relatively low density, which originates from grain-boundary-free nature semiconductor, enables this mobility.
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