Characterization of ZnO Nanowire Field Effect Transistors by Fast Hydrogen Peroxide Solution Treatment
作者： Taehyeon Kwon , Woojin Park , Minhyeok Choe , Jongwon Yoon , Sangsu Park
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摘要: This study demonstrates a simple and fast method of the operation mode control for ZnO nanowire field effect transistors (FETs) with hydrogen peroxide (H2O2, 10%) solution treatment 5–10 s. With this H2O2 treatment, surface nanowires was roughened as confirmed by transmission electron microscopy images defect level-related emission increased from photoluminescence (PL) data. Correspondingly, threshold voltage H2O2-treated FETs shifted to positive gate bias direction, leading transition depletion-mode enhancement-mode. can be useful controlling wide shift in few second treatment.
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