Method for programming of a semiconductor memory cell
作者： Eduardo Maayan , Zeev Cohen , Boaz Eitan
DOI:
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摘要: A method for programming an array having a multiplicity of memory cells. The includes, per cell to be programmed, verifying programmed or non-programmed state the and flagging those cells that verify as during one steps after previously verified programmed. pulse level is applied which are not flagged verifying, applying then repeated until all at least once. Subsequently, boost lower than
lens.org 参考文章(8)
Narbeh Derhacobian, Hao Fang, Method for reducing program disturb during self-boosting in a NAND flash memory ,(1998)
Christopher D. Setzer, David C. Long, Mark J. La Plante, Howard A. Bender, William D. Carbaugh, Method and apparatus for an increased pulse repetition rate for a CW pumped laser ,(1992)
Eliyahou Harari, Sanjay Mehrotra, Winston Lee, Multi-state EEprom read and write circuits and techniques ,(1990)
Sau C. Wong, Hock C. So, High resolution analog storage EPROM and flash EPROM ,(1996)
George J. Korsh, Sakhawat M. Khan, Precision programming of nonvolatile memory cells ,(1998)
Phillip M. L. Kwong, Mark Bauer, Chakravarthy Yarlagadda, Albert Fazio, Mamun Rashid, Method and apparatus for verifying the programming of multi-level flash EEPROM memory ,(1994)
May Lee, Lawrence D. Engh, Method and apparatus for an adaptive ramp amplitude controller in nonvolatile memory application ,(1997)
Takayuki Kawahara, Hiroshi Sato, Katsutaka Kimura, Shoji Kubono, Atsushi Nozoe, Hiroaki Kotani, Satoshi Noda, Keiichi Yoshida, Semiconductor integrated circuit with multiple write operation modes ,(1997)