Study of La-modified antiferroelectric PbZrO3 thin films
作者： S.S.N. Bharadwaja , S.B. Krupanidhi
DOI: 10.1016/S0040-6090(02)00996-3
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摘要: Dielectric and DC electrical properties of antiferroelectric lead zirconate La-doped thin films deposited using a pulsed excimer-laser ablation technique were studied in detail. Increased La dopant concentration pure reduced the dielectric maximum Curie temperature. At 9 mol.% zirconate, transition temperature to room A gradual change from paraelectric through ferroelectric phases was observed with addition zirconate. The effect donor on leakage current studied. Correlation between macroscopic changes charge transport mechanisms, microscopic defect chemistry charge-carrier trapping phenomenon examined
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