A dry etching process of gallium arsenide and its application
作者： Luo Yuhui , Cheng Yuanhong , Kuang Zhihao , Huang Yisheng
DOI:
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摘要: The invention discloses a dry etching process of gallium arsenide and application thereof. Specifically, the is to deposit SiO2 thin film layer on surface wafer,and then photolithographically etch mask layer; Gallium was etched by inductively coupled plasma under SiO2. gases were chlorine boron trichloride. does not produce lateral etching, side wall bottom are relatively smooth.
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