Multi-planar electrode plasma etching

摘要: Dry plasma etching of a plurality planar thin-film semiconductor wafers is effected simultaneously and uniformly in relatively small chamber enveloping vertically-stacked array laminar electrode sub-assemblies each which includes pair oppositely-excited plates tightly sandwiching solid insulating layer dielectric material, the parallel being vertically separated to subdivide into reactor regions where RF discharges can excite normally inert ambient gas develop reactive for simultaneous or ion (RIE) all within several regions. The upper sub-assemblies, support during etching, are at any instant maintained same potential, whether ground different modes operation, fluid coolant forced through distribution internal passageways those plates; lower pairs opposite RF, intervening layers thin while time providing critical electrical isolation curbing spurious discharge without serious mismatching. Uncomplicated transport individual between positions cassette stacked accomplished from below by reciprocatable arm receivable accommodating slots recessed cooled alongside one edge array; programmed vertical movements allow appropriate loading unloading wafers, proper orientation relation enclosing associated equipment.