Understanding the multistate SET process in Ge-Sb-Te-based phase-change memory

摘要: Multilevel operation is a topic of much current research in the field phase-change memory materials, representing most feasible method for increasing density beyond ultimate scaling limits cell size. In this work, we present combined experimental and ab initio molecular dynamics study formation intermediate states during crystallisation Ge2Sb2Te5 (GST). A single resistance level formed within narrow voltage window, simulations suggest consists microscopic crystallites embedded bulk amorphous phase. These findings are interpreted framework classical nucleation theory, mechanism proposed to explain state. Our that it may be difficult obtain multiple reliably shed light on fundamental limitations using multilevel programming.