UV ozone passivation of the metal/dielectric interface for HfO2-based organic thin film transistors
作者： Wing Man Tang , WT Ng , MG Helander , MT Greiner , ZH Lu
DOI: 10.1116/1.3498744
关键词:
摘要: Ultraviolet (UV) ozone passivation of the metal/dielectric interface was investigated in HfO2-based devices. It is found that Al gate reduces leakage current by two orders magnitude and increases breakdown field strength 14%. A thicker wide-band gap Al2O3 interlayer formed on during UV treatment improves quality suppresses associated with high-k material. Copper phthalocyanine-based organic thin-film transistors HfO2 as dielectric were fabricated glass. passivated devices exhibited a low threshold voltage −0.29 V subthreshold slope 0.38 V/decade, demonstrating advantage passivation.
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