Ultraviolet-Ozone Oxidation of Metal Films
作者： Shriram Ramanathan , David Chi , Paul C. McIntyre , Christopher J. Wetteland , Joseph R. Tesmer
DOI: 10.1149/1.1566416
关键词: Partial pressure 、 Nuclear reaction analysis 、 Hafnia 、 Inorganic chemistry 、 Limiting oxygen concentration 、 Ultraviolet 、 Ozone 、 Chemistry 、 Oxygen 、 Metal
摘要: Metal oxides such as zirconia and hafnia are being investigated new materials for application gate dielectrics in future complementary metal-oxide-semiconductor devices. In this paper, we present results on oxidation of metal films Zr, Hf, Al by the ultraviolet (UV) ozone method. A nuclear reaction analysis technique, 16 O(d,α) 14 N reaction, was used to quantify oxygen concentration dielectric stacks. The method found be sensitive monolayer levels oxygen. It that kinetics metals increased significantly due presence UV light. rate also depend partial pressure. Zr greater than while oxidized more slowly Hf UV-ozone conditions investigated. Possible reasons observed behavior discussed detail.
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