UV assisted oxidation and nitridation of hafnia based thin films for alternate gate dielectric applications

摘要: Abstract The synergistic effects of NH 3 ambient and ultraviolet illumination on the dielectric properties hafnia based gate dielectrics are reported in this paper. films were processed at relatively low temperatures (∼400 °C) by pulsed laser ablation UV oxidation technique. created a thin denser interfacial layer (at film–Si interface) comprised Hf Si O N bonding. As result modification, leakage current density lower than 10 −4  A/cm 2 constant ∼21.7 extracted from best samples under illumination. nitrogen doped HfO also exhibited thinner (∼12 A) comparison to without ambient.