Thin films of (HfO 2 ) x (Al 2 O 3 ) 1−x alloys: Preparation, chemical structure and dielectric properties

摘要: Thin films of (HfO 2 ) x (Al O 3 1−x alloys were prepared by chemical vapor deposition using the volatile coordination compounds. Amorphous structure has been revealed x-ray analysis when Al content is ≫30%. It was shown EDS and XPS that concentration increases with rising substrate temperature Al(acac) in mixture precursors. Formation rather than HfO mixture. Decreasing line from interface to surface observed for deposited source precursors The refraction index function composition variations through film thickness. refractive invariant thickness layers two spaced sources This an indication uniform components distribution. As dielectrics MIS-structures thin show lower permittivity (k=11−16) (k=15 − 20), but smaller leakage current (to values j = 10−6 10−8 A/cm2.