Raman determination of layer stresses and strains for heterostructures and its application to the cubic SiC/Si system
作者： Z. C. Feng , W. J. Choyke , J. A. Powell
DOI: 10.1063/1.341997
关键词:
摘要: … with biaxial stress in the film due to the difference oflattice constants and thermal coefficients. Our equations for biaxial … The studies of CVD growth of 3 C-SiC on Si have shown that it is …
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